Architect's rendering of complete campus

© STMicroelectronics

STMicroelectronics to build world’s first fully integrated silicon carbide facility in Italy

STMicroelectronics, a global semiconductor leader serving customers across the spectrum of electronics applications, announces a new high-volume 200mm silicon carbide (“SiC”) manufacturing facility for power devices and modules, as well as test and packaging, to be built in Catania, Italy. Combined with the SiC substrate manufacturing facility being readied on the same site, these facilities will form ST’s Silicon Carbide Campus, realising the Company’s vision of a fully vertically integrated manufacturing facility for the mass production of SiC on one site. The creation of the new Silicon Carbide Campus is a key milestone to support customers for SiC devices across automotive, industrial and cloud infrastructure applications, as they transition to electrification and seek higher efficiency.

“The fully integrated capabilities unlocked by the Silicon Carbide Campus in Catania will contribute significantly to ST’s SiC technology leadership for automotive and industrial customers through the next decades,” said Jean-Marc Chery, President and Chief Executive Officer of STMicroelectronics. “The scale and synergies offered by this project will enable us to better innovate with high-volume manufacturing capacity, to the benefit of our European and global customers as they transition to electrification and seek more energy efficient solutions to meet their decarbonisation goals.”

Global SiC ecosystem

The Silicon Carbide Campus will serve as the centre of ST’s global SiC ecosystem, integrating all steps in the production flow, including SiC substrate development, epitaxial growth processes, 200mm front-end wafer fabrication and module back-end assembly, as well as process R&D, product design, advanced R&D labs for dies, power systems and modules, and full packaging capabilities. This will achieve a first of a kind in Europe for the mass production of 200mm SiC wafers with each step of the process – substrate, epitaxy & front-end, and back-end – using 200 mm technologies for enhanced yields and performances.

The new facility is targeted to start production in 2026 and to ramp to full capacity by 2033, with up to 15,000 wafers per week at full build-out. The total investment is expected to be around five billion euros, with a support of around two billion euros provided by the State of Italy within the framework of the EU Chips Act. Sustainable practices are integral to the design, development, and operation of the Silicon Carbide Campus to ensure the responsible consumption of resources including water and power.

STMicroelectronics

Did you like the content? Share now:

Support us

Support independent and dedicated journalism!

We do not believe in paywalls. Our mission is to serve our industries with up-to-date, independently researched information on the topics that really matter to our community. As a start-up company, M2N Media GmbH comprises of a small team of dedicated people with decades of experience in our industries. If you like what we have to offer, please consider a recurring financial contribution!

We want to grow and become even better at what we do. You can help us in writing our success story! Join the M2N Supporters Club!

Support now via PayPal

Our top supporters will receive all print issues for free! Thank you for your contribution!

To top